? semiconductor components industries, llc, 2011 november, 2011 ? rev. 3 publication order number: bat54awt1/d 1 bat54awt1g, SBAT54AWT1G schottky barrier diodes these schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. extremely low forward voltage reduces conduction loss. miniature surface mount package is excellent for hand held and portable applications where space is limited. features ? extremely fast switching speed ? low forward voltage ? 0.35 v (typ) @ i f = 10 madc ? aec qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* maximum ratings (t j = 125 ? c unless otherwise noted) rating symbol value unit reverse voltage v r 30 v forward power dissipation @ t a = 25 ? c derate above 25 ? c p f 200 1.6 mw mw/ ? c forward current (dc) i f 200 max ma non ? repetitive peak forward current t p < 10 msec i fsm 600 ma repetitive peak forward current pulse wave = 1 sec, duty cycle = 66% i frm 300 ma junction temperature t j ? 55 to 125 ? c storage temperature range t stg ? 55 to +150 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 30 volt schottky barrier detector and switching diodes anode 3 cathode 1 2 cathode http://onsemi.com device package shipping ? ordering information sot ? 323 case 419 style 4 marking diagram bat54awt1g sot ? 323 (pb ? free) 3,000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. b7m b7 = device code m = date code* = pb ? free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. 1 SBAT54AWT1G sot ? 323 (pb ? free) 3,000/tape & reel
bat54awt1g, SBAT54AWT1G http://onsemi.com 2 electrical characteristics (t a = 25 ? c unless otherwise noted) (each diode) characteristic symbol min typ max unit reverse breakdown voltage (i r = 10 a) v (br)r 30 ? ? v total capacitance (v r = 1.0 v, f = 1.0 mhz) c t ? 7.6 10 pf reverse leakage (v r = 25 v) i r ? 0.5 2.0 adc forward voltage (i f = 0.1 madc) v f ? 0.22 0.24 vdc forward voltage (i f = 30 madc) v f ? 0.41 0.5 vdc forward voltage (i f = 100 madc) v f ? 0.52 0.8 vdc reverse recovery time (i f = i r = 10 madc, i r(rec) = 1.0 madc, figure 1) t rr ? ? 5.0 ns forward voltage (i f = 1.0 madc) v f ? 0.29 0.32 vdc forward voltage (i f = 10 madc) v f ? 0.35 0.40 vdc notes: 1. a 2.0 k variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2 k 820 0.1 f dut v r 100 h 0.1 f 50 output pulse generator 50 input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 1 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1 ma) i f input signal figure 1. recovery time equivalent test circuit
bat54awt1g, SBAT54AWT1G http://onsemi.com 3 c t , total capacitance (pf) 100 0.0 0.1 v f , forward voltage (v) 0.2 0.3 0.4 0.5 10 1.0 0.1 85 ? c 10 0 v r , reverse voltage (v) 1.0 0.1 0.01 0.001 510 15 20 25 14 0 v r , reverse voltage (v) 12 4 2 0 51015 30 figure 2. forward voltage figure 3. leakage current figure 4. total capacitance ? 40 ? c 25 ? c t a = 150 ? c t a = 125 ? c t a = 85 ? c t a = 25 ? c 0.6 ? 55 ? c 150 ? c 125 ? c 100 1000 30 25 20 6 8 10 i r , reverse current ( a) i f , forward current (ma)
bat54awt1g, SBAT54AWT1G http://onsemi.com 4 package dimensions sot ? 323 (sc ? 70) case 419 ? 04 issue n a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022 style 4: pin 1. cathode 2. cathode 3. anode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bat54awt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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